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IPG20N10S4L35ATMA1

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IPG20N10S4L35ATMA1

Mfr.Part # : IPG20N10S4L35ATMA1

Manufacturer : Infineon Technologies

Description : MOSFET 2N-CH 8TDSON

Stock : 4955

Product Category : Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C : 20A

Drain to Source Voltage (Vdss) : 100V

FET Feature : Logic Level Gate

FET Type : 2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs : 17.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1105pF @ 25V

Mounting Type : Surface Mount

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : 8-PowerVDFN

Power - Max : 43W

Product Status : Active

Rds On (Max) @ Id, Vgs : 35mOhm @ 17A, 10V

Supplier Device Package : PG-TDSON-8-4

Vgs(th) (Max) @ Id : 2.1V @ 16µA

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